CHA3514 Datasheet - United Monolithic Semiconductors

CHA3514 GaAs Monolithic Microwave

The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.

CHA3514 Features

* Performances: 6-18GHz

* 19dBm saturated output power

* 13 dB gain

* 4bit attenuator for 39.5dB dynamic range

* DC power consumption, 190mA @ 4.5V

* Chip size: 5.54 x 2.30 x 0.1mm Typical on wafer Measurements Gain versus attenuation states Main Characteristics Tamb. = 25°

CHA3514-UnitedMonolithicSemiconductors.pdf