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CHA6517 6 - 18 GHz High Power Amplifier

CHA6517 Description

www.DataSheet4U.com CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC .
The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications.

CHA6517 Features

* 0.25 µm Power pHEMT Technology 6
* 18 GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent Bias point : 600mA @ 8V per channel Chip size: 4.32 x 3.90 x 0.07 mm INPUT A OUTPUT A Vd1 Vd2 Vd3 INPUT B OUTPUT B Vg Vd3 Main Ch

CHA6517 Applications

* This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process:
* the backside of the chip is both RF and DC grounded
* bond pads and back side are gold plated for compatibility with e

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GHz High Power Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA6517-like datasheet