CHA6517 Datasheet, Amplifier, United Monolithic Semiconductors

✔ CHA6517 Features

0.25 µm Power pHEMT Technology 6
18 GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent Bias point : 60

✔ CHA6517 Application

This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the subst

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CHA6517

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United Monolithic Semiconductors

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📄 Datasheet

Description:

6 - 18 ghz high power amplifier. The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is ma

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CHA6517 GHz High Power Amplifier United Monolithic Semiconductors