CHA6517 - 6 - 18 GHz High Power Amplifier

United Monolithic Semiconductors

CHA6517 Datasheet Preview — Preview of CHA6517 PDF

Datasheet Details

Part number	CHA6517
Manufacturer	United Monolithic Semiconductors
File Size	460.75 KB
Description	6 - 18 GHz High Power Amplifier
Datasheet	CHA6517_UnitedMonolithicSemiconductors.pdf

CHA6517 Product details

Description

The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. the backside of the chip is both RF and DC grounded bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process.

Features

0.25 µm Power pHEMT Technology 6.
18 GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent Bias point : 600mA @ 8V per channel Chip size: 4.32 x 3.90 x 0.07 mm INPUT A OUTPUT A Vd1 Vd2 Vd3 INPUT B OUTPUT B Vg Vd3 Main Characteristics Tamb = +25° C (Tamb is the back-side of the chip) Symbol F_op Psat G_lin Parameter Operating frequency range Saturated output power Linear gain Min 6 30 19 32 22 Typ Max 18 Unit GHz dBm.

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Published: Aug 16, 2010 |