CHA6517 Datasheet - United Monolithic Semiconductors

CHA6517 6 - 18 GHz High Power Amplifier

The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: * the backsid.

CHA6517 Features

* 0.25 µm Power pHEMT Technology 6

* 18 GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent Bias point : 600mA @ 8V per channel Chip size: 4.32 x 3.90 x 0.07 mm INPUT A OUTPUT A Vd1 Vd2 Vd3 INPUT B OUTPUT B Vg Vd3 Main Ch

CHA6517_UnitedMonolithicSemiconductors.pdf