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CHA6518 5 - 18 GHz High Power Amplifier

CHA6518 Description

www.DataSheet4U.com CHA6518 RoHS COMPLIANT 5 * 18 GHz High Power Amplifier GaAs Monolithic Microwave IC .
The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications.

CHA6518 Features

* n n n n n n 0.25 µm Power pHEMT Technology 5
* 18 GHz Frequency Range 2W Output Power 24 dB nominal Gain Quiescent Bias point : 8V ; 1A Chip size: 5.23 mm x 3.26 mm x 0.07 mm Vg Vd 50Ω IN Input matching Interstage Stage 1 / Stage 2 Interstage Stage 2 / Stage 3 Output 50Ω combiner OUT

CHA6518 Applications

* This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process:
* the backside of the chip is both RF and DC grounded
* bond pads and back side are gold plated for compatibility with e

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GHz High Power Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA6518-like datasheet