CHA6518 Datasheet - United Monolithic Semiconductors

CHA6518 5 - 18 GHz High Power Amplifier

The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: * the backside of the chip.

CHA6518 Features

* n n n n n n 0.25 µm Power pHEMT Technology 5

* 18 GHz Frequency Range 2W Output Power 24 dB nominal Gain Quiescent Bias point : 8V ; 1A Chip size: 5.23 mm x 3.26 mm x 0.07 mm Vg Vd 50Ω IN Input matching Interstage Stage 1 / Stage 2 Interstage Stage 2 / Stage 3 Output 50Ω combiner OUT

CHA6518_UnitedMonolithicSemiconductors.pdf