CHA6518 Datasheet - United Monolithic Semiconductors

5 - 18 GHz High Power Amplifier

CHA6518 Features

* n n n n n n 0.25 µm Power pHEMT Technology 5

* 18 GHz Frequency Range 2W Output Power 24 dB nominal Gain Quiescent Bias point : 8V ; 1A Chip size: 5.23 mm x 3.26 mm x 0.07 mm Vg Vd 50Ω IN Input matching Interstage Stage 1 / Stage 2 Interstage Stage 2 / Stage 3 Output 50Ω combiner OUT

CHA6518 General Description

The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: * the backside of the chip.

CHA6518 Datasheet (353.03 KB)

CHA6518 Datasheet Preview — Preview of CHA6518 PDF

Datasheet Details

Part number:

CHA6518

Manufacturer:

United Monolithic Semiconductors

File Size:

353.03 KB

Description:

5 - 18 ghz high power amplifier.

📁 Related Datasheet

CHA6517 6 - 18 GHz High Power Amplifier (United Monolithic Semiconductors)

CHA6550-98F Power Amplifier (United Monolithic Semiconductors)

CHA6550-QXG 17.0 - 23.6GHz Power Amplifier (United Monolithic Semiconductors)

CHA6551-99F 17-24GHz Power Amplifier (United Monolithic Semiconductors)

CHA6552-QJG GaAs Monolithic Microwave (United Monolithic Semiconductors)

CHA6558-99F four stages GaAs high power amplifier (United Monolithic Semiconductors)

CHA6005-99F High Power Amplifier (United Monolithic Semiconductors)

CHA6005-QEG High Power Amplifier (United Monolithic Semiconductors)

CHA6015-99F 2-8GHz High Power Amplifier (United Monolithic Semiconductors)

CHA6042 13-16GHz High Power Amplifier (United Monolithic Semiconductors)

TAGS

CHA6518 GHz High Power Amplifier United Monolithic Semiconductors

Image Gallery

CHA6518 Features

CHA6518 General Description

Datasheet Details

File Size:

Description:

CHA6518 Distributor