CHA6518 Datasheet, Amplifier, United Monolithic Semiconductors

✔ CHA6518 Features

n n n n n n 0.25 µm Power pHEMT Technology 5
18 GHz Frequency Range 2W Output Power 24 dB nominal Gain Quiescent Bias point : 8V ; 1A Chip size: 5.23 mm x 3.26 mm x 0.0

✔ CHA6518 Application

This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the subst

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CHA6518

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📄 Datasheet

Description:

5 - 18 ghz high power amplifier. The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured us

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United Monolithic Semiconductors

MMW POWER AMPLIFIER

Richardson RFPD

CHA6518-99F

0 In Stock

Unit Price : $0

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CHA6518 GHz High Power Amplifier United Monolithic Semiconductors