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CHA6551-99F Datasheet - United Monolithic Semiconductors

17-24GHz Power Amplifier

CHA6551-99F Features

* Broadband performances: 17-24GHz

* 32dBm saturated power

* 39dBm OIP3

* 22dB Gain

* DC bias: Vd = 4.0 Volt @ Id = 880mA

* Chip size 3.60x3.46x0.07mm Output Power & PAE vs frequency Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gai

CHA6551-99F General Description

The CHA6551-99F is a three stage monolithic GaAs high power circuit producing 1.6 Watt output power. It is highly linear, with possible gain control RFIN and integrates a power detector. ESD protections are included. It is designed for a wide range of applications: Space, military and automotive com.

CHA6551-99F Datasheet (0.99 MB)

Preview of CHA6551-99F PDF

Datasheet Details

Part number:

CHA6551-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

0.99 MB

Description:

17-24ghz power amplifier.

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TAGS

CHA6551-99F 17-24GHz Power Amplifier United Monolithic Semiconductors

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