CHA6552-QJG Datasheet - United Monolithic Semiconductors

CHA6552-QJG GaAs Monolithic Microwave

The CHA6552-QJG is a three stage monolithic GaAs high power circuit producing YYWWG 4 Watt output power. UMS A366878A UMSUMS A366878AIt is designed for Point to Point radio and A6Y5Y52WWG commercial communication systems. YYWWGThe circuit is manufactured with a pHEMT YYWWAU36M6878SA proc.

CHA6552-QJG Features

* 40

* Broadband performances: 5.8- 8.5GHz 39

* 36dBm saturated power 38

* 35dBm at 1dB compression

* 22dB gain

* DC bias: Vd = 7.0Volt @ Id = 1.8A

* QFN6x6 UMS

* MSL3 37 36 35 34 33 32 31 30 5 Pout & PAE versus frequency P-1dB at 1.8 A Psat at 1.8 A PAE at 1.8A 6789

CHA6552-QJG-UnitedMonolithicSemiconductors.pdf

CHA6552-QJG Datasheet Preview — Preview of CHA6552-QJG PDF

Datasheet Details

Part number:

CHA6552-QJG

Manufacturer:

United Monolithic Semiconductors

File Size:

625.57 KB

Description:

Gaas monolithic microwave.

📁 Related Datasheet

CHA6550-98F Power Amplifier (United Monolithic Semiconductors)

CHA6550-QXG 17.0 - 23.6GHz Power Amplifier (United Monolithic Semiconductors)

CHA6551-99F 17-24GHz Power Amplifier (United Monolithic Semiconductors)

CHA6558-99F four stages GaAs high power amplifier (United Monolithic Semiconductors)

CHA6517 6 - 18 GHz High Power Amplifier (United Monolithic Semiconductors)

CHA6518 5 - 18 GHz High Power Amplifier (United Monolithic Semiconductors)

CHA6005-99F High Power Amplifier (United Monolithic Semiconductors)

CHA6005-QEG High Power Amplifier (United Monolithic Semiconductors)

TAGS

CHA6552-QJG CHA6552-QJG GaAs Monolithic Microwave United Monolithic Semiconductors

CHA6552-QJG Distributor