CHA6558-99F Datasheet - United Monolithic Semiconductors

CHA6558-99F four stages GaAs high power amplifier

The CHA6558-99F is a monolithic four stages GaAs high power amplifier, designed for Ka-Band applications. The circuit is dedicated to telecommunication and VSAT, SATCOM and is also well suited for a wide range of microwave applications and systems. It is developed on a robust 0.15µm gate length pHEM.

CHA6558-99F Features

* Linear gain (dB) / Output Power (dBm) & PAE (%) @ saturation (dBm)

* Broadband performances: 28-32GHz

* 21dB Linear Gain

* 33dBm output power @3dB compression.

* 23% PAE@ 3dB compression

* DC bias: Vd=6Volt@Id=1.4A

* Chip size 3.46x2.71x0.07mm 39 37 35 33 31 29 27 25 Pout

CHA6558-99F_UnitedMonolithicSemiconductors.pdf

CHA6558-99F Datasheet Preview — Preview of CHA6558-99F PDF

Datasheet Details

Part number:

CHA6558-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

559.22 KB

Description:

Four stages gaas high power amplifier.

📁 Related Datasheet

CHA6550-98F Power Amplifier (United Monolithic Semiconductors)

CHA6550-QXG 17.0 - 23.6GHz Power Amplifier (United Monolithic Semiconductors)

CHA6551-99F 17-24GHz Power Amplifier (United Monolithic Semiconductors)

CHA6552-QJG GaAs Monolithic Microwave (United Monolithic Semiconductors)

CHA6517 6 - 18 GHz High Power Amplifier (United Monolithic Semiconductors)

CHA6518 5 - 18 GHz High Power Amplifier (United Monolithic Semiconductors)

CHA6005-99F High Power Amplifier (United Monolithic Semiconductors)

CHA6005-QEG High Power Amplifier (United Monolithic Semiconductors)

TAGS

CHA6558-99F CHA6558-99F four stages GaAs high power amplifier United Monolithic Semiconductors

CHA6558-99F Distributor