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CHA6558-99F four stages GaAs high power amplifier

CHA6558-99F Description

CHA6558-99F RoHS COMPLIANT 28-32GHz HPA 2W GaAs Monolithic Microwave IC .
The CHA6558-99F is a monolithic four stages GaAs high power amplifier, designed for Ka-Band applications.

CHA6558-99F Features

* Linear gain (dB) / Output Power (dBm) & PAE (%) @ saturation (dBm)
* Broadband performances: 28-32GHz
* 21dB Linear Gain
* 33dBm output power @3dB compression.
* 23% PAE@ 3dB compression
* DC bias: Vd=6Volt@Id=1.4A
* Chip size 3.46x2.71x0.07mm 39 37 35 33 31 29 27 25 Pout

CHA6558-99F Applications

* The circuit is dedicated to telecommunication and VSAT, SATCOM and is also well suited for a wide range of microwave applications and systems. It is developed on a robust 0.15µm gate length pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is availab

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United Monolithic Semiconductors CHA6558-99F-like datasheet