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CHA6550-98F Power Amplifier

CHA6550-98F Description

CHA6550-98F 17-23.6GHz Power Amplifier GaAs Monolithic Microwave IC bare die .
The CHA6550-98F is a three stage monolithic GaAs high power amplifier circuit, which integrates differential mode power Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 D.

CHA6550-98F Features

* Broadband performances: 17-23.6GHz
* 34dBm saturated power
* 39dBm OIP3
* 22dB gain
* Gain control up to 15dB
* DC bias: Vd = 6Volt @ Id=1.3A
* Chip size 3.46x3.61x0.07 mm Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Line

CHA6550-98F Applications

* such as SATCOM. The circuit is highly linear and compatible with the last generation of Digital Pre-Distortion. Its versatile biasing condition helps to tune the performances. The circuit is manufactured with a pHEMT Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 space evaluated process, 0.15µm gate length. Main

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Power Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA6550-98F-like datasheet