CHA8611-99F Datasheet, Amplifier, United Monolithic Semiconductors

CHA8611-99F Features

  • Amplifier
  • Frequency range: 8.5-11GHz
  • High output power: 18W
  • High PAE: 43%
  • Linear Gain: 24dB
  • DC bias: Vd=25Volt @ Idq=0.8A
  • Chip size 4.3

PDF File Details

Part number:

CHA8611-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

1.69MB

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📄 Datasheet

Description:

18w x-band high power amplifier. V+ The CHA8611-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 18W of saturated

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CHA8611-99F Application

  • Applications from military to commercial communication systems. The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via ho

TAGS

CHA8611-99F
18W
X-Band
High
Power
Amplifier
United Monolithic Semiconductors

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Stock and price

United Monolithic Semiconductors
RF & MW POWER AMPLIFIER
Richardson RFPD
CHA8611-99F
0 In Stock
Qty : 50 units
Unit Price : $261.25
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