CHA8611-99F Datasheet - United Monolithic Semiconductors

CHA8611-99F 18W X-Band High Power Amplifier

V+ The CHA8611-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 18W of saturated output power and 43% of power added efficiency. In Out It is designed for a wide range of STG1 STG2 applications, from military to commercial communication syst.

CHA8611-99F Features

* Frequency range: 8.5-11GHz

* High output power: 18W

* High PAE: 43%

* Linear Gain: 24dB

* DC bias: Vd=25Volt @ Idq=0.8A

* Chip size 4.36x2.57x0.1mm

* Available in bare die Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Line

CHA8611-99F-UnitedMonolithicSemiconductors.pdf

CHA8611-99F Datasheet Preview — Preview of CHA8611-99F PDF

Datasheet Details

Part number:

CHA8611-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

1.69 MB

Description:

18w x-band high power amplifier.

CHA8611-99F Distributor

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CHA8611-99F CHA8611-99F 18W X-Band High Power Amplifier United Monolithic Semiconductors