CHA8611-99F - 18W X-Band High Power Amplifier

United Monolithic Semiconductors

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Datasheet Details

Part number	CHA8611-99F
Manufacturer	United Monolithic Semiconductors
File Size	1.69 MB
Description	18W X-Band High Power Amplifier
Datasheet	CHA8611-99F-UnitedMonolithicSemiconductors.pdf

CHA8611-99F Product details

Description

V+ The CHA8611-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 18W of saturated output power and 43% of power added efficiency.In Out It is designed for a wide range of STG1 STG2 applications, from military to commercial communication systems.The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.V- It is available in chip form.M

Features

Frequency range: 8.5-11GHz.
High output power: 18W.
High PAE: 43%.
Linear Gain: 24dB.
DC bias: Vd=25Volt @ Idq=0.8A.
Chip size 4.36x2.57x0.1mm.
Available in bare die Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Pout Output Power PAE Associated Power Added Efficiency Min Typ Max Unit 8.5 11 GHz 24 dB 18 W 43 % Ref. DSCHA86110301 - 27 Oct 20 1/26 Specifications subject to change without n.

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Published: Jan 27, 2025 |