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CHA8710a99F

25W X-Band High Power Amplifier

CHA8710a99F Features

* Frequency range: 8.5-10.5GHz

* High output power: 25W

* High PAE: 44%

* Linear Gain: 28.5dB

* DC bias: Vd=25Volt @ Idq=0.75A

* Chip size 5.1x4.2x0.1mm

* Available in bare die Main Electrical Characteristics Vd = +25V, Idq = 750mA, Pulse width=25µs & Duty cycle =10%,

CHA8710a99F General Description

V+ The CHA8710a99F is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 44% of power added efficiency. In Out It is designed for a wide range of STG1 STG2 applications, from military to commercial communication sy.

CHA8710a99F Datasheet (1.52 MB)

Preview of CHA8710a99F PDF

Datasheet Details

Part number:

CHA8710a99F

Manufacturer:

United Monolithic Semiconductors

File Size:

1.52 MB

Description:

25w x-band high power amplifier.

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TAGS

CHA8710a99F 25W X-Band High Power Amplifier United Monolithic Semiconductors

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