CHA8710a99F 25W X-Band High Power Amplifier

United Monolithic Semiconductors

Description

CHA8710a99F 25W X-Band High Power Amplifier GaN Monolithic Microwave IC .
V+ The CHA8710a99F is a two stage High Power Amplifier operating between 8.

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Datasheet Specifications

Part number: CHA8710a99F
Manufacturer: United Monolithic Semiconductors
File Size: 1.52 MB
Datasheet: CHA8710a99F-UnitedMonolithicSemiconductors.pdf
Description: 25W X-Band High Power Amplifier

Features

* Frequency range: 8.5-10.5GHz
* High output power: 25W
* High PAE: 44%
* Linear Gain: 28.5dB
* DC bias: Vd=25Volt @ Idq=0.75A
* Chip size 5.1x4.2x0.1mm
* Available in bare die Main Electrical Characteristics Vd = +25V, Idq = 750mA, Pulse width=25µs & Duty cycle =10%,

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CHA8710a99F 25W X-Band High Power Amplifier United Monolithic Semiconductors

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