CHA8710a99F - 25W X-Band High Power Amplifier

United Monolithic Semiconductors

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Datasheet Details

Part number	CHA8710a99F
Manufacturer	United Monolithic Semiconductors
File Size	1.52 MB
Description	25W X-Band High Power Amplifier
Datasheet	CHA8710a99F-UnitedMonolithicSemiconductors.pdf

CHA8710a99F Product details

Description

V+ The CHA8710a99F is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 44% of power added efficiency.In Out It is designed for a wide range of STG1 STG2 applications, from military to commercial communication systems.The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.V- It is available in chip form.

Features

Frequency range: 8.5-10.5GHz.
High output power: 25W.
High PAE: 44%.
Linear Gain: 28.5dB.
DC bias: Vd=25Volt @ Idq=0.75A.
Chip size 5.1x4.2x0.1mm.
Available in bare die Main Electrical Characteristics Vd = +25V, Idq = 750mA, Pulse width=25µs & Duty cycle =10%, Tamb. = +25°C Symbol Parameter Min Typ Max Freq Frequency range 8.5 10.5 Gain Linear Gain 28.5 Pout Output Power 25 PAE Associated Power Added Efficiency 44 Unit GHz dB W % Ref. : DSCHA87.

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Published: Jan 26, 2025 |