CHA8100 - X-band HBT High Power Amplifier

United Monolithic Semiconductors

CHA8100 Datasheet Preview — Preview of CHA8100 PDF

Datasheet Details

Part number	CHA8100
Manufacturer	United Monolithic Semiconductors
File Size	251.03 KB
Description	X-band HBT High Power Amplifier
Datasheet	CHA8100-UnitedMonolithicSemiconductors.pdf

CHA8100 Product details

Description

The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. an analogue biasing circuit that makes it less sensitive to spread and chip environment. an integrated TTL interface that enables to switch the HPA with a current consumption lower than 1mA The circuit is 100% DC and RF tested on wafer to ensure

Features

11W output power in pulse mode High gain: > 18dB @ 10GHz High PAE: 40% @ 10GHz Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to biasing circuit Chip size: 4.9 x 3.

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Other Datasheets by United Monolithic Semiconductors

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Published: Nov 28, 2016 |