Datasheet Details
- Part number
- STB11NM60
- Manufacturer
- VBsemi
- File Size
- 228.68 KB
- Datasheet
- STB11NM60-VBsemi.pdf
- Description
- N-Channel 30V MOSFET
STB11NM60 Description
STB11NM60-VB STB11NM60-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.012 at VGS = 10 V 0.018 a.
STB11NM60 Features
* Trench Power MOSFET
* 100 % Rg and UIS Tested
STB11NM60 Applications
* OR-ing
* Server
* DC/DC
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pu
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