* Trench Power MOSFET
* 100 % Rg and UIS Tested
* Compliant to RoHS Directive 2011/65/EU APPLICATIONS
* OR-ing
* Server
* DC/DC S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage
STB11NM60 Datasheet (228.68 KB)
STB11NM60
VBsemi
228.68 KB
N-channel 30v mosfet.
STB11NM60-VB STB11NM60-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.012 at VGS = 10 V 0.018 a.
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