STB11NM60 Datasheet - VBsemi

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STB11NM60 N-Channel 30V MOSFET

STB11NM60-VB STB11NM60-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.012 at VGS = 10 V 0.018 a.

STB11NM60-VBsemi.pdf

STB11NM60 Datasheet Preview — Preview of STB11NM60 PDF

Datasheet Details

Part number:

STB11NM60

Manufacturer:

VBsemi

File Size:

228.68 KB

Description:

N-Channel 30V MOSFET

Features

* Trench Power MOSFET
* 100 % Rg and UIS Tested

Applications

* OR-ing
* Server
* DC/DC S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pu

STB11NM60 Distributors

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STB11NM60 N-Channel 30V MOSFET VBsemi

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