VS3622DP Datasheet - VBsemi

VS3622DP, Dual N-Channel 30V MOSFET

VS3622DP-VB VS3622DP-VB Datasheet Dual N-Channel 30V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0034 at VGS = 10 V 30 0.00.

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VS3622DP-VBsemi.pdf

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Datasheet Details

Part number:

VS3622DP

Manufacturer:

VBsemi

File Size:

310.79 KB

Description:

Dual N-Channel 30V MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % UIS Tested
* 100 % Rg Tested

Applications

* Set Top Box
* Low Current DC/DC PHASE Top View Bottom View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA

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VS3622DP Dual N-Channel 30V MOSFET VBsemi

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