Datasheet4U Logo Datasheet4U.com

VS3622DP - Dual N-Channel 30V MOSFET

VS3622DP Description

VS3622DP-VB VS3622DP-VB Datasheet Dual N-Channel 30V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0034 at VGS = 10 V 30 0.00.

VS3622DP Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % UIS Tested
* 100 % Rg Tested

VS3622DP Applications

* Set Top Box
* Low Current DC/DC PHASE Top View Bottom View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA

📥 Download Datasheet

Preview of VS3622DP PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VS3622DP
Manufacturer
VBsemi
File Size
310.79 KB
Datasheet
VS3622DP-VBsemi.pdf
Description
Dual N-Channel 30V MOSFET

📁 Related Datasheet

  • VS3622DP2 - Dual N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VS3622DE - Dual N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VS3622DS - Dual N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VS3622AA - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VS3622AD - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VS3622AE - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VS3622AS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VS3625DB - 30V Dual Asymmetric N-Channel Advanced Power MOSFET (Vanguard Semiconductor)

📌 All Tags

Dual N-Channel 30V MOSFET VBsemi
VBsemi VS3622DP-like datasheet