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IRF830 Power MOSFET

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Description

www.vishay.com IRF830 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max.(nC) Qgs .
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number
IRF830
Manufacturer
Vishay ↗
File Size
129.48 KB
Datasheet
IRF830-Vishay.pdf
Description
Power MOSFET

Features

* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* Fast switching
* Ease of paralleling Available
* Simple drive requirements
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note
* T

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRF830PbF IRF830PbF-BE3 ABSOLUTE MAXIM

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