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SUP85N10-10P N-Channel 100 V (D-S) MOSFET

SUP85N10-10P Description

SUP85N10-10P Vishay Siliconix N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.010 at VGS = 10 V ID (A) 85d Qg (Typ.) 77 .

SUP85N10-10P Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

SUP85N10-10P Applications

* Industrial D GD S Top View Ordering Information: SUP85N10-10P-GE3 (Lead (Pb)-free and Halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ =

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