* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
VBT3080C-E3 Datasheet (160.31 KB)
VBT3080C-E3
160.31 KB
Dual trench mos barrier schottky rectifier.
VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low .
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