* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2011/65/EU 2 1
* Halogen-free according to IEC 61249-2
VFT4045BP Datasheet (140.99 KB)
VFT4045BP
140.99 KB
Trench mos barrier schottky rectifier.
VFT4045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 .
📁 Related Datasheet
VFT4045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT4045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VFT4060C Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VFT45-28 VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT10200C Trench MOS Barrier Schottky Rectifier (Vishay)
VFT10200C-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VFT1045BP Trench MOS Barrier Schottky Rectifier (Vishay)
VFT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT1045CBP Trench MOS Barrier Schottky Rectifier (Vishay)
VFT1060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
