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VFT4060C Dual Trench MOS Barrier Schottky Rectifier

VFT4060C Description

www.DataSheet.co.kr New Product VFT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 .

VFT4060C Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 2 3 VFT4060C PIN 1 PIN 3

VFT4060C Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 60 V 240 A 0.48 V 150 °C Case: ITO-220AB Molding compound m

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Datasheet Details

Part number
VFT4060C
Manufacturer
Vishay ↗
File Size
136.35 KB
Datasheet
VFT4060C_Vishay.pdf
Description
Dual Trench MOS Barrier Schottky Rectifier

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Dual Trench MOS Barrier Schottky Rectifier Vishay
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