Datasheet Details
- Part number
- SIHFPE50
- Manufacturer
- Vishay ↗ Siliconix
- File Size
- 1.56 MB
- Datasheet
- SIHFPE50_VishaySiliconix.pdf
- Description
- Power MOSFET
SIHFPE50 Description
IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 200 24 .
G
S D G S N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized d.
SIHFPE50 Features
* 800 1.2
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Isolated Central Mounting Hole
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Lead (Pb)-free Available
Available
RoHS
SIHFPE50 Applications
* where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. ORDERING INFORMATION
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