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SiHFI9640G Power MOSFET

SiHFI9640G Description

IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

SiHFI9640G Features

* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* P-Channel
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Lead (Pb)-free Available Available 0.50 RoHS
* COMPLIANT

SiHFI9640G Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

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