2SA1162 Datasheet - WEJ

2SA1162 PNP EPITAXIAL SILICON TRANSISTOR

RoHS 2SA1162 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER DComplemen to 2SC2712 Collector-current:Ic=-100mA .,LTCollector-Emiller Voltage:VCE=-45V SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR 2.9 1.9 0.95 0.95 0.4 OUnit:mm CABSOLUTE MAXIMUM RATINGS ICCharacteristic Collector-Base Voltage Collector-Emitter Voltage NEmitter-Base Voltage Collector Current OCollector Dissipation Ta=25oC Junction Temperature RStorage Temperature Symbol VCBO VCEO VEBO Ic PD T.

2SA1162-WEJ.pdf

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Datasheet Details

Part number:

2SA1162

Manufacturer:

WEJ

File Size:

100.03 KB

Description:

Pnp epitaxial silicon transistor.

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2SA1162 2SA1162 PNP EPITAXIAL SILICON TRANSISTOR WEJ

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