WNM2306 Datasheet, Mosfet, Will Semiconductor

✔ WNM2306 Features

SOT-23 D 3 12 GS Configuration (Top View) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshol

✔ WNM2306 Application

Standard Product WNM2306 is Pb-free. Features SOT-23 D 3 12 GS Configuration (Top View) z Trench Technol

PDF File Details

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Part number:

WNM2306

Manufacturer:

Will Semiconductor

File Size:

99.93 KB

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📄 Datasheet

Description:

N-channel power mosfet. The WNM2306 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RD

📥 Download PDF (99.93 KB)

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WNM2306 N-Channel Power MOSFET Will Semiconductor