WNM2306 N-Channel Power MOSFET

Will Semiconductor

Description

WNM2306 N-Channel, 20V, 3.2A, Power MOSFET WNM2306 Http://www.willsemi.com V(BR)DSS 20 Rds(on) (Max.m) 45 @ 4.5V 55 @ 2.5V 66 @ 1.8V .
The WNM2306 is N-Channel enhancement MOS Field Effect Transistor.

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Datasheet Specifications

Part number: WNM2306
Manufacturer: Will Semiconductor
File Size: 99.93 KB
Datasheet: WNM2306-WillSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* SOT-23 D 3 12 GS Configuration (Top View) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 WT6
* WT6

WNM2306 Distributors

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WNM2306 N-Channel Power MOSFET Will Semiconductor

Will Semiconductor WNM2306-like datasheet