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WFU830 - Silicon N-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 32nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet preview – WFU830

Datasheet Details

Part number WFU830
Manufacturer Winsemi
File Size 650.82 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFU830 Datasheet
Additional preview pages of the WFU830 datasheet.

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Full PDF Text Transcription

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr U830 WF WFU Silicon N-Channel MOSFET Features ■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
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