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C3M0045065K Silicon Carbide Power MOSFET

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Description

C3M0045065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (Pin 1, TAB) .

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Datasheet Specifications

Part number
C3M0045065K
Manufacturer
Wolfspeed
File Size
877.41 KB
Datasheet
C3M0045065K-Wolfspeed.pdf
Description
Silicon Carbide Power MOSFET

Features

* C3MTM Silicon Carbide (SiC) MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast i

Applications

* EV chargers
* Server & Telecom PSU
* UPS
* Solar inverters
* SMPS
* DC/DC converters Benefits
* Reduce switching losses and minimize gate ringing
* Higher system efficiency
* Reduce cooling requirements
* Increase pow

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