C4D10120D - 10A Silicon Carbide Schottky Diode
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.
SiC diodes can be easily paralleled to meet various applica
C4D10120D Features
* High-Frequency Operation
* Zero Reverse Recovery Current / Forward Recovery Voltage
* Temperature-Independent Switching Behavior
* Parallel Devices Without Thermal Runaway Typical Applications
* Boost Diodes in PFC or DC/DC Stages
* Free Wheeling Di
