C4D10120D Datasheet - Wolfspeed

C4D10120D 10A Silicon Carbide Schottky Diode

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various applica.

C4D10120D Features

* High-Frequency Operation

* Zero Reverse Recovery Current / Forward Recovery Voltage

* Temperature-Independent Switching Behavior

* Parallel Devices Without Thermal Runaway Typical Applications

* Boost Diodes in PFC or DC/DC Stages

* Free Wheeling Di

C4D10120D-Wolfspeed.pdf