XP10C135M N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP10C135M Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performanc.
XP10C135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP10C135M
Manufacturer: YAGEO
File Size: 277.02 KB
Datasheet: XP10C135M-YAGEO.pdf
Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 100V 135mΩ 3.2A -100V 155mΩ -3.2A D2 The SO-8 package is widely preferred for all commercial- G1 G2 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch S1 S2 applications. Absolu

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XP10C135M P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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