XP10C1K8EU6 N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP10C1K8EU6 Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Gate Drive S2 G2 ▼ Small Package Outline D1 D2 ▼ Embedded.
XP10C1K8 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP10C1K8EU6
Manufacturer: YAGEO
File Size: 188.61 KB
Datasheet: XP10C1K8EU6-YAGEO.pdf
Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* N-CH P-CH G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 SOT-363 package is ultra-small surface mount package and lead free RoHS compliant. S1 100V 1.8Ω 270mA -100V 3.6Ω -200mA D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel

XP10C1K8EU6 Distributors

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XP10C1K8EU6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP10C1K8EU6-like datasheet