XP2306AGN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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YAGEO

Datasheet Details

Part number	XP2306AGN
Manufacturer	YAGEO
File Size	180.28 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP2306AGN Datasheet
Additional preview pages of the XP2306AGN datasheet.

Product details

Description

XSemi MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and G cost-effectiveness device.The SOT-23 package is widely used for all commercial-industrial applications.30V 35mΩ 5A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Puls

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Published: Jul 5, 2025 |