XP9997GM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP9997GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteri.
XP9997 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP9997GM
Manufacturer: YAGEO
File Size: 204.93 KB
Datasheet: XP9997GM-YAGEO.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercial- G1 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID D1 G2 S1 95V 110mΩ 3A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specifie

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XP9997GM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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