Datasheet Details
| Part number | XP9997GM |
|---|---|
| Manufacturer | YAGEO |
| File Size | 204.93 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 XP9997GM-YAGEO.pdf
|
| Part number | XP9997GM |
|---|---|
| Manufacturer | YAGEO |
| File Size | 204.93 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
XP9997GM-YAGEO.pdf
|
XP9997 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.It provides the designer with an extreme efficient device for use in a wide range of power applications.The SO-8 package is widely preferred for all commercial- G1 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.BVDSS RDS(ON) ID D1 G2 S1 95V 110mΩ 3A D2 S2 Absolut
📁 XP9997GM Similar Datasheet