YJQ4666A Datasheet, Transistor, Yangzhou Yangjie

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Part number:

YJQ4666A

Manufacturer:

Yangzhou Yangjie

File Size:

554.98kb

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📄 Datasheet

Description:

P-channel enhancement mode field effect transistor.

  • Trench Power LV MOSFET technology
  • Low RDS(ON)
  • Low Gate Charge Applications
  • Battery charge
  • Datasheet Preview: YJQ4666A 📥 Download PDF (554.98kb)
    Page 2 of YJQ4666A Page 3 of YJQ4666A

    YJQ4666A Application

    • Applications
    • Battery charge
    • Load switching in Cellular handset
    • Ultraportable applications
    • Absolute Maximum

    TAGS

    YJQ4666A
    P-Channel
    Enhancement
    Mode
    Field
    Effect
    Transistor
    Yangzhou Yangjie

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