YJQ4666B Datasheet - Yangzhou Yangjie

YJQ4666B, P-Channel Enhancement Mode Field Effect Transistor

YJQ4666B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=-4.5V) * RD.
Trench Power LV MOSFET technology. Low RDS(ON). Low Gate Charge Applications. Battery charge. Load switching in Cellular ha.

Applications

* Battery charge
* Load switching in Cellular handset
* Ultraportable applications
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ Total Power

YJQ4666B-YangzhouYangjie.pdf