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YJQ4666C Datasheet - Yangzhou Yangjie

YJQ4666C P-Channel Enhancement Mode Field Effect Transistor

* Trench Power LV MOSFET technology * Low RDS(ON) * Low Gate Charge Applications * Battery charge * Load switching in Cellular handset * Ultraportable applications * Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source .

YJQ4666C Datasheet (580.66 KB)

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Datasheet Details

Part number:

YJQ4666C

Manufacturer:

Yangzhou Yangjie

File Size:

580.66 KB

Description:

P-channel enhancement mode field effect transistor.

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YJQ4666C P-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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