YJS12G06D N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

YJS12G06D RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * RDS.
Split Gate Trench MOSFET technology. Excellent package for heat dissipation. High density cell design for low RDS(ON) Applications.

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YJS12G06D Datasheet Preview — Preview of YJS12G06D PDF

Datasheet Specifications

Part number: YJS12G06D
Manufacturer: Yangzhou Yangjie
File Size: 1.19 MB
Datasheet: YJS12G06D-YangzhouYangjie.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Applications

* DC-DC Converters
* Power management functions
* Industrial and Motor Drive application
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V Drain Current (Silicon limited) TA=

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