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YJS12G06D Datasheet - Yangzhou Yangjie

YJS12G06D N-Channel Enhancement Mode Field Effect Transistor

* Split Gate Trench MOSFET technology * Excellent package for heat dissipation * High density cell design for low RDS(ON) Applications * DC-DC Converters * Power management functions * Industrial and Motor Drive application * Absolute Maximum Ratings (TA=25℃unless otherw.

YJS12G06D Datasheet (1.19 MB)

Preview of YJS12G06D PDF

Datasheet Details

Part number:

YJS12G06D

Manufacturer:

Yangzhou Yangjie

File Size:

1.19 MB

Description:

N-channel enhancement mode field effect transistor.

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