YJS12G06D Datasheet, Transistor, Yangzhou Yangjie

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Part number:

YJS12G06D

Manufacturer:

Yangzhou Yangjie

File Size:

1.19MB

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📄 Datasheet

Description:

N-channel enhancement mode field effect transistor.

Split Gate Trench MOSFET technology

Excellent package for heat dissipation

High density cell design for

YJS12G06D Application

• Applications
• DC-DC Converters
• Power management functions
• Industrial and Motor Drive application
• Absolute Max

TAGS

YJS12G06D

Yangzhou Yangjie

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