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YJS12G06D - N-Channel Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number YJS12G06D
Manufacturer Yangzhou Yangjie
File Size 1.19 MB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet YJS12G06D-YangzhouYangjie.pdf

YJS12G06D Product details

Description

Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Industrial and Motor Drive application Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V Drain Current (Silicon limited) TA=25℃ TA=100℃ 12 ID A 7.5 Pulsed Drain Current A

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