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YJS12G06A

N-Channel Enhancement Mode Field Effect Transistor

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Distributor Yangzhou Yangjie Electronics Co Ltd YJS12G06A Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 7.5A; SOP8 TME 0 2500 units
$0.13

YJS12G06A Datasheet (572.54 KB)

Preview of YJS12G06A PDF Datasheet

Datasheet Details

Part number:

YJS12G06A

Manufacturer:

Yangzhou Yangjie

File Size:

572.54 KB

Description:

N-channel enhancement mode field effect transistor

YJS12G06A General Description


*Split Gate Trench Power MV MOSFET technology
*Low RDS(ON)
*Low Gate Charge
*Optimized for fast-switching applications Applications
*Synchronus Rectification in DC/DC and AC/DC Converters
*Industrial and Motor Drive application
*Absolute Maximum Ratings (TA=25℃unless ot.

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YJS12G06A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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