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YJS12G06A Datasheet - Yangzhou Yangjie

YJS12G06A N-Channel Enhancement Mode Field Effect Transistor

*Split Gate Trench Power MV MOSFET technology *Low RDS(ON) *Low Gate Charge *Optimized for fast-switching applications Applications *Synchronus Rectification in DC/DC and AC/DC Converters *Industrial and Motor Drive application *Absolute Maximum Ratings (TA=25℃unless ot.

YJS12G06A Datasheet (572.54 KB)

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Datasheet Details

Part number:

YJS12G06A

Manufacturer:

Yangzhou Yangjie

File Size:

572.54 KB

Description:

N-channel enhancement mode field effect transistor.

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