YJS12G06A N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

YJS12G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary *VDS *ID(at VGS=10V) *RDS(ON)( at VGS=10V) .
Split Gate Trench Power MV MOSFET technology. Low RDS(ON). Low Gate Charge. Optimized for fast-switching applications Applications.

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Datasheet Specifications

Part number: YJS12G06A
Manufacturer: Yangzhou Yangjie
File Size: 572.54 KB
Datasheet: YJS12G06A-YangzhouYangjie.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Applications

* Applications
* Synchronus Rectification in DC/DC and AC/DC Converters
* Industrial and Motor Drive application
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-source Voltage VDS Gate-source Voltage VGS Drain Current G TC=25℃ ID TC=100℃ Pulsed Dr

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