YJS05GP10A P-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

YJS05GP10A RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=-10V) * R.
Split gate trench MOSFET technology. High density cell design for low RDS(ON). Low Crss(Typ. Moisture Sensitivity Level 3.

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Datasheet Specifications

Part number: YJS05GP10A
Manufacturer: Yangzhou Yangjie
File Size: 799.13 KB
Datasheet: YJS05GP10A-YangzhouYangjie.pdf
Description: P-Channel Enhancement Mode Field Effect Transistor

Applications

* DC motor control
* power supplies
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A Avalanche energy B TA=25℃ TA=100℃ VDS -100 V VGS ±20 V -4.5 ID A -2.85

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