Download Datasheet (799.13 KB)
YJS05GP10A
Yangzhou Yangjie
799.13 KB
p-channel enhancement mode field effect transistor.
YJS05GP10A
RoHS
COMPLIANT
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
* VD.
* Split gate trench MOSFET technology * High density cell design for low RDS(ON) * Low Crss(Typ.25pF.
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