YJS05GP10A Datasheet, Transistor, Yangzhou Yangjie

PDF File Details

Part number:

YJS05GP10A

Manufacturer:

Yangzhou Yangjie

File Size:

799.13kb

Download:

📄 Datasheet

Description:

p-channel enhancement mode field effect transistor.

Split gate trench MOSFET technology

High density cell design for low RDS(ON)

Low Crss(Typ.25pF)

YJS05GP10A Application

• Applications
• DC motor control
• power supplies
• Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symb

TAGS

YJS05GP10A

Yangzhou Yangjie

📁 Related Datasheet

YJS12G06A - N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)
YJS12G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ●VDS ●ID(at VGS=10V) ●RDS(ON)( at VGS=10V) ●RDS(ON)( at.

YJS12G06D - N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)
YJS12G06D RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5.

YJS15G10B - N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)
YJS15G10B RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5.

YJ162-1 - YJ162-1 (ETC)
.

YJ60A - Single-cell lithium battery power indicator (YENJI)
Y J 60A ■ Y J 60A ， CMOS ，，。 LY JN60A ， 4 。 ，±1%。 OPENDRAIN ， IO LED 。 ■  ：<10uA  4 ， 4  ，。  ：±2% ■   LED  ■  SOT23-6L D1 D2 D.

YJB150N06BQ - N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)
YJB150N06BQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● 100% UIS Tested ●.

YJD15N10A - N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)
YJD15N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5.

YJD80G06A - N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)
YJD80G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5.

YJG25GP10A - P-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)
YJG25GP10A RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-.

YJG25GP10AQ - P-Channel 100V MOSFET (VBsemi)
YJG25GP10AQ-VB YJG25GP10AQ-VB Datasheet P-Channel 1 00-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 100 0.075 at VGS = - 10 V 0.08 0 at V.