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YJS05GP10A Datasheet - Yangzhou Yangjie

YJS05GP10A P-Channel Enhancement Mode Field Effect Transistor

* Split gate trench MOSFET technology * High density cell design for low RDS(ON) * Low Crss(Typ.25pF) * Moisture Sensitivity Level 3 * Epoxy Meets UL 94 V-0 Flammability Rating * Halogen Free Applications * DC motor control * power supplies * Absolute Maximum Ra.

YJS05GP10A Datasheet (799.13 KB)

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Datasheet Details

Part number:

YJS05GP10A

Manufacturer:

Yangzhou Yangjie

File Size:

799.13 KB

Description:

p-channel enhancement mode field effect transistor.

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