YJS15G10B N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

YJS15G10B RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * RDS.
Low RDS(on) & FOM. Extremely low switching loss. Excellent stability and uniformity. Fast switching and soft recovery Applicatio.

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YJS15G10B Datasheet Preview — Preview of YJS15G10B PDF

Datasheet Specifications

Part number: YJS15G10B
Manufacturer: Yangzhou Yangjie
File Size: 588.29 KB
Datasheet: YJS15G10B-YangzhouYangjie.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Applications

* Consumer electronic power supply
* Motor control
* Synchronous-rectification
* Isolated DC/DC convertor
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current A Pulsed Drain Current B

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