YJS15G10B Datasheet - Yangzhou Yangjie

YJS15G10B, N-Channel Enhancement Mode Field Effect Transistor

YJS15G10B RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * RDS.
Low RDS(on) & FOM. Extremely low switching loss. Excellent stability and uniformity. Fast switching and soft recovery Applicatio.

YJS15G10B-YangzhouYangjie.pdf

YJS15G10B Datasheet Preview — Preview of YJS15G10B PDF

Datasheet Details

Part number:

YJS15G10B

Manufacturer:

Yangzhou Yangjie

File Size:

588.29 KB

Description:

N-Channel Enhancement Mode Field Effect Transistor

Applications

* Consumer electronic power supply
* Motor control
* Synchronous-rectification
* Isolated DC/DC convertor
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current A Pulsed Drain Current B

YJS15G10B Distributors

📁 Related Datasheet

📌 All Tags

YJS15G10B N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

Yangzhou Yangjie YJS15G10B-like datasheet

YJS12G06A

YJS12G06D

YJS05GP10A