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ISO5852S-Q1 Datasheet - Texas Instruments

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT MOSFET Gate Driver

The ISO5852S-Q1 device is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to ma.

ISO5852S-Q1 Features

* 1 Features

* 1 Qualified for Automotive Applications

* AEC-Q100 Qualified With the Following Results:

* Device Temperature Grade 1:

* 40°C to +125°C Ambient Operating Temperature Range

* Device HBM Classification Level 3A

* Device CDM Classification Lev

ISO5852S-Q1-etcTI.pdf

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Datasheet Details

Part number:

ISO5852S-Q1

Manufacturer:

Texas Instruments ↗

File Size:

1.63 MB

Description:

High-cmti 2.5-a and 5-a reinforced isolated igbt mosfet gate driver.

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TAGS

ISO5852S-Q1 ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT MOSFET Gate Driver Texas Instruments

ISO5852S-Q1 Distributor