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NP2N11MR 100V N-Channel Enhancement Mode MOSFET

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Description

NP2N11MR 100V N-Channel Enhancement Mode MOSFET .
Schematic diagram The NP2N11MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra.

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Datasheet Specifications

Part number
NP2N11MR
Manufacturer
natlinear
File Size
0.97 MB
Datasheet
NP2N11MR-natlinear.pdf
Description
100V N-Channel Enhancement Mode MOSFET

Features

* VDS =110V,ID =2A RDS(ON)(Typ. )=220mΩ @VGS=10V RDS(ON)(Typ. )=240mΩ @VGS=4.5V
* High power and current handing capability
* Lead free product is acquired

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