Datasheet Details
- Part number
- PBSS5350D
- Manufacturer
- nexperia ↗
- File Size
- 817.75 KB
- Datasheet
- PBSS5350D-nexperia.pdf
- Description
- PNP transistor
PBSS5350D Description
PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev.6 * 28 June 2011 Product data sheet 1.Product profile 1.1 General .
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
PBSS5350D Features
* Low collector-emitter saturation voltage VCEsat
* High current capability
* High efficiency due to less heat
generation
* AEC-Q101 qualified
PBSS5350D Applications
* Supply line switching circuits
* Battery management applications
* DC-to-DC conversion
1.4 Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation resistan
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