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PMDXB550UNE dual N-channel MOSFET

PMDXB550UNE Description

PMDXB550UNE 30 V, dual N-channel Trench MOSFET 25 March 2015 Product data sheet 1.General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic pack.

PMDXB550UNE Features

* Low threshold voltage
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM

PMDXB550UNE Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current

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