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PMPB30XPE P-channel MOSFET

PMPB30XPE Description

PMPB30XPE 20 V, P-channel Trench MOSFET 26 April 2018 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.

PMPB30XPE Features

* Extended temperature range Tj = 175 °C
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Tin-plated 100 % solderable side pads for optical solder inspection
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Trench MOSFET technology

PMPB30XPE Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drain-source voltage Tj = 25 °C - - -20 VGS gate-source voltage -12 - 8 I

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