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PMXB350UPE P-Channel MOSFET

PMXB350UPE Description

PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package u.

PMXB350UPE Features

* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Exposed drain pad for excellent thermal conduction
* ElectroStatic Discharge (ESD) protection 1 kV HBM
* Drain-source on-state resistance RDSon = 350 mΩ

PMXB350UPE Applications

* High-side load switch and charging switch for portable devices
* Power management in battery driven portables
* LED driver
* DC-to-DC converter 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source

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