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PSMN1R7-40YLD N-channel MOSFET

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Description

PSMN1R7-40YLD N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data .
200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

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Features

* 200 A continuous ID(max) rating
* Avalanche rated, 100% tested at IAS = 180 A
* Strong SOA (linear-mode) rating
* NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
* Low QRR, QG and QGD for high system efficiency and low EM

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