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PE2305A - P-Channel Enhancement Mode Power MOSFET

Description

The PE2305A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -4.1A RDS(ON).

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Datasheet preview – PE2305A

Datasheet Details

Part number PE2305A
Manufacturer semi one
File Size 211.07 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE2305A Datasheet
Additional preview pages of the PE2305A datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2305A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V PE2305A Rev. A.
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