PE4946 - N-Channel Enhancement Mode Power MOSFET
PE4946 Features
* VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Low gate to drain charge to reduce switching losses Application
* Power switching application
* H
