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PED2312 Dual P & N-Channel Enhancement Mode Power MOSFET

PED2312 Description

PED2312 Dual Enhancement Mode Power MOSFET (N- and P- Channel) .
The PED2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

PED2312 Features

* P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V

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Datasheet Details

Part number
PED2312
Manufacturer
semi one
File Size
1.94 MB
Datasheet
PED2312-semione.pdf
Description
Dual P & N-Channel Enhancement Mode Power MOSFET

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📌 All Tags

Dual N-Channel Enhancement Mode Power MOSFET semi one
semi one PED2312-like datasheet