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AP20N02S Datasheet PDF

APM AP20N02S

The AP20N02S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP20N02S
Datasheet AP20N02S Download
Manufacturer
APM
Description 20V N-Channel Enhancement Mode MOSFET
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AP20N02S datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS=20V ID=20A RDS(ON) < 7.5mΩ @ VGS=4.5V (Type:5.1mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP20N02S SOP-8L

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V ID@TA=70℃ Continuous Drain Current, VGS @ 4.5V IDM Pulsed Drain Current note1 EAS Single Pulsed Avalanche Energy note2 PD@TA=25℃ Power Dissipation TJ, TSTG Operating and Storage Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance, Junction to Case AP20N02S REV1.0 Marking AP20N02S XXX YYYY Qty(PCS) 3000 Max. 20 ±12 20 16 60 47.6 37 -55 to +175 85 4 Units V V A A A mJ W ℃ ℃/W ℃/W 永源微電子科技有限公司 1 AP20N02S 20V N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TC=25℃, unless otherwise noted) Symbol Parameter Test Condition V(BR)DSS Drain-Source Breakdown V...
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