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AP20N02S - 20V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP20N02S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS=20V ID=20A RDS(ON) < 7.5mΩ @ VGS=4.5V （Type：5.1mΩ）.

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Datasheet preview – AP20N02S

Datasheet Details

Part number AP20N02S
Manufacturer APM
File Size 750.93 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP20N02S Datasheet
Additional preview pages of the AP20N02S datasheet.

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Full PDF Text Transcription

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AP20N02S 20V N-Channel Enhancement Mode MOSFET Description The AP20N02S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=20V ID=20A RDS(ON) < 7.5mΩ @ VGS=4.5V （Type：5.1mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP20N02S SOP-8L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V ID@TA=70℃ Continuous Drain Current, VGS @ 4.
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