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AP20N02S - 20V N-Channel Enhancement Mode MOSFET

General Description

The AP20N02S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS=20V ID=20A RDS(ON) < 7.5mΩ @ VGS=4.5V （Type：5.1mΩ）.

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Datasheet Details

Part number AP20N02S
Manufacturer APM
File Size 750.93 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP20N02S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP20N02S 20V N-Channel Enhancement Mode MOSFET Description The AP20N02S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=20V ID=20A RDS(ON) < 7.5mΩ @ VGS=4.5V （Type：5.1mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP20N02S SOP-8L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V ID@TA=70℃ Continuous Drain Current, VGS @ 4.