Datasheet Details
| Part number | AO4407 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.77 KB |
| Description | P-Channel MOSFET |
| Datasheet | AO4407_AlphaOmegaSemiconductors.pdf |
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Overview: AO4407 30V P-Channel MOSFET General.
| Part number | AO4407 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.77 KB |
| Description | P-Channel MOSFET |
| Datasheet | AO4407_AlphaOmegaSemiconductors.pdf |
|
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Product Summary The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=-20V) RDS(ON) (at VGS=-20V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-5V) * RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested -30V -12A < 13mΩ < 14mΩ < 30mΩ Top View D D D D SOIC-8 Bottom View G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G Maximum -30 ±25 -12 -10 -60 26 101 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev.14.0: July 2013 www.aosmd.com Page 1 of 5 AO4407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance VDS=0V, VGS= ±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-20V, ID=-12A VGS=-10V, ID=-12A VGS=-5V, ID=-7A gFS Forward Transconductance VDS=-5V, ID=-10.5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C -30 -1.7 -60 -2.25 -1 -5 ±100 -2.8 8.5 10 12 19 27 -0.72 13 14 19 30 -1 -4 V µA nA V A mΩ mΩ mΩ S V A DYNAMIC PARAMETERS Ciss Input C
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4407 | P-Channel MOSFET | Freescale |
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AO4407 | P-Channel MOSFET | VBsemi |
 |
AO4407 | P-Channel MOSFET | Kexin |
|
AO4407A | P-Channel MOSFET | Freescale |
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AO4407A | P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AO4407A | 30V P-Channel MOSFET |
| AO4407C | P-Channel MOSFET |
| AO4400 | N-Channel MOSFET |
| AO4401 | P-Channel MOSFET |
| AO4402 | 20V N-Channel MOSFET |
| AO4402G | 20V N-Channel MOSFET |
| AO4403 | 30V P-Channel MOSFET |
| AO4404 | N-Channel MOSFET |
| AO4404B | 30V N-Channel MOSFET |
| AO4405 | 30V P-Channel MOSFET |