Datasheet Details
| Part number | AO4407A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 291.26 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO4407A_AlphaOmegaSemiconductors.pdf |
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Overview: AO4407A 30V P-Channel MOSFET General.
| Part number | AO4407A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 291.26 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO4407A_AlphaOmegaSemiconductors.pdf |
|
|
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The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
This device is suitable for use as a load switch or in PWM applications.
* RoHS and Halogen-Free Complaint Product Summary VDS = -30V ID = -12A (VGS = -20V) RDS(ON) < 11mΩ (VGS = -20V) RDS(ON) < 13mΩ (VGS = -10V) RDS(ON) < 17mΩ (VGS = -6V) 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Avalanche Current G IAR Repetitive avalanche energy L=0.3mH G EAR Power Dissipation A TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -12 -10 -60 -26 101 3.1 2.0 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State RqJA 32 60 Maximum Junction-to-Lead C Steady State RqJL 17 Max 40 75 24 Rev.11.1 March 2024 www.aosmd.com Units V V A mJ W °C Units °C/W °C/W °C/W Page1 of 5 AO4407A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID = -250mA, VGS = 0V -30 V IDSS Zero Gate Voltage Drain Current VDS = -30V, VGS = 0V TJ = 55°C -1 mA -5 IGSS Gate-Body leakage current VDS = 0V, VGS = ±25V ±100 nA VGS(th) Gate Threshold Voltage VDS = VGS ID = -250mA -1.7 -2.3 -3 V ID(ON) On state drain current VGS = -10V, VDS = -5V -60 A VGS = -20V, ID = -12A 8.5 11 RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS = -10V, ID = -12A 11.5 15 mW 10 13 VGS = -6V, ID = -10A 12.7 17 gFS Forward Transconductance VDS = -5V, ID = -10A 21 S VSD Diode Forward Voltage IS = -1A,VGS = 0V -0.7
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4407A | P-Channel MOSFET | Freescale |
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AO4407A | P-Channel MOSFET | VBsemi |
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AO4407A | P-Channel MOSFET | Kexin |
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AO4407 | P-Channel MOSFET | Freescale |
|
AO4407 | P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AO4407 | P-Channel MOSFET |
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| AO4401 | P-Channel MOSFET |
| AO4402 | 20V N-Channel MOSFET |
| AO4402G | 20V N-Channel MOSFET |
| AO4403 | 30V P-Channel MOSFET |
| AO4404 | N-Channel MOSFET |
| AO4404B | 30V N-Channel MOSFET |
| AO4405 | 30V P-Channel MOSFET |