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AO4408L - N-Channel MOSFET

This page provides the datasheet information for the AO4408L, a member of the AO4408 N-Channel MOSFET family.

Datasheet Summary

Description

The AO4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast www.DataSheet4U.com switching.

This device makes an excellent high side switch for notebook CPU core DC-DC conversion.

AO4408L(Green Product) is offered in a lead-free package.

Features

  • VDS (V) = 30V ID = 12A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B Maximum 30 ±12 12 10 80 30 100 3 2.1 -55 to 150 Units V V A A mJ W °C VGS TA=25°C TA=70°C ID IDM IAV B,E Avalanche Current B,E Repetitive Avalanche Energy Power Dissipation L=0.1mH TA=25°C TA=70°C Junction and Storage.

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Datasheet preview – AO4408L

Datasheet Details

Part number AO4408L
Manufacturer Alpha & Omega Semiconductors
File Size 165.87 KB
Description N-Channel MOSFET
Datasheet download datasheet AO4408L Datasheet
Additional preview pages of the AO4408L datasheet.

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Full PDF Text Transcription

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Rev 3: June 2004 AO4408, AO4408L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description The AO4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast www.DataSheet4U.com switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408L(Green Product) is offered in a lead-free package. Features VDS (V) = 30V ID = 12A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B Maximum 30 ±12 12 10 80 30 100 3 2.
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