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AO4630 - MOSFET

Description

AO4630 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

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Full PDF Text Transcription

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AO4630 30V Complementary MOSFET General Description AO4630 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. Product Summary N-Channel VDS= 30V ID= 7A (VGS=10V) RDS(ON) < 23mΩ (VGS=10V) < 28mΩ (VGS=4.5V) < 36mΩ (VGS=2.5V) 100% UIS Tested 100% Rg Tested P-Channel -30V -5A (VGS=-10V) RDS(ON) < 48mΩ (VGS=-10V) < 57mΩ (VGS=-4.5V) < 78mΩ (VGS=-2.
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